Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied utilizing Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis from the defect stacking faults, inclusions of defects and their distribution has https://www.facebook.com/permalink.php?story_fbid=pfbid035xccZZWoSeKZbLp6rFMzZsGNDQNab15eR85APt4TAi7pnNZbvT6k6XLxikzQPDcHl&id=61562415773754&__cft__[0]=AZW5XYBhl_y0RIJDr8gOuHdRU3nE78QCrQg63YdgwGY8xUVimuxGsKOXlVf0ZtH9PnqNGvHYcVsvfnl95qQt7TO3hI1B-ROspHZ9xSqkz2SM5DPFjU_nmKrGc_GqmAHuwLiJNaDyoHIWF2pBuIJqye0Mc0-JFrLDyH23P69QHJoWEXO2aMDUeA7iXTax3QK8jB_jedaq5lYOwPfdfFEaqbir&__tn__=%2CO%2CP-R